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Transition metal oxides : an introduction to their electronic structure and properties
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ISBN: 0198555709 0198559259 Year: 1992 Publisher: Oxford : Clarendon Press,

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Transition metal oxides
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ISBN: 1560816473 Year: 1995 Publisher: New York (N.Y.) : VCH,

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Diffusion processes in transition metal oxides
Year: 1993 Publisher: London Taylor & Francis

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Electronic states of correlated transition metal oxides: Ca(1-x) Sr(x) VO(3) and Sr(2)RuO(4)
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Year: 1999 Publisher: Ibaraki Electrotechnical laboratory

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Transition metal oxides : crystal chemistry, phase transition, and related aspects
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Year: 1974 Publisher: Washington, [D.C.] : U.S. Dept. of Commerce, National Bureau of Standards,

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Transition metal oxides : crystal chemistry, phase transition, and related aspects
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Year: 1974 Publisher: Washington, [D.C.] : U.S. Dept. of Commerce, National Bureau of Standards,

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Transition metal oxides
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ISBN: 9780444873941 0444873945 9780080887425 0080887422 Year: 1989 Publisher: Amsterdam, the Netherlands New York New York, NY, U.S.A. Elsevier Distributors for the U.S. and Canada, Elsevier Science Pub. Co.

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In this book the author presents an up-to-date summary of existing information on the structure, electronic properties, chemistry and catalytic properties of transition metal oxides. The subjects covered in the book can be divided into three sections. The first (chapters 1 to 3) covers the structural, physical, magnetic, and electronic properties of transition metal oxides. Although the emphasis is on surface properties, relevant bulk properties are also discussed. The second section (chapters 4 to 7) covers surface chemical properties. It includes topics that describe the importance of surface coordinative unsaturation in adsorption, the formation of surface acidity and the role of acidity in determining surface chemical properties, the nature and reactivities of adsorbed oxygen, and the surface chemistry in the reduction of oxides. The third section (chapters 8 to 14) is on the catalytic properties. Various catalytic reactions including decomposition, hydrogenation, isomerization, metathesis, selective oxidation, and reactions involving carbon oxides are discussed. Emphasis is placed more on reaction mechanisms and the role of catalysts than on kinetics and processes. Chapters on the preparation of oxide catalysts and on photo-assisted processes are also included. Whenever appropriate, relationships between various topics are indicated. Written for surface physicists, chemists, and catalytic engineers, the book will serve as a useful source of information for investigators and as a comprehensive overview of the subject for graduate students.


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Frontiers of 4d- and 5d-transition metal oxides
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ISBN: 9789814374859 9789814522458 9814374857 9789814374866 9814374865 Year: 2013 Publisher: Hackensack, NJ : World scientific,

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This book is aimed at advanced undergraduates, graduate students and other researchers who possess an introductory background in materials physics and/or chemistry, and an interest in the physical and chemical properties of novel materials, especially transition metal oxides.New materials often exhibit novel phenomena of great fundamental and technological importance. Contributing authors review the structural, physical and chemical properties of notable 4d- and 5d-transition metal oxides discovered over the last 10 years. These materials exhibit extraordinary physical properties that differ


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Transition metal oxides : an introduction to their electronic structure and properties
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ISBN: 9780199588947 0199588945 Year: 2010 Volume: 27 Publisher: Oxford : Clarendon Press : Oxford University Press,

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Oxide electronics and functional properties of transition metal oxides
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ISBN: 1633215342 9781633215344 1633214990 9781633214996 Year: 2014 Publisher: New York : Nova Publishers,

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MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both

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