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Efficient clean energy harvesting, conversion, and storage technologies are of immense importance for the sustainable development of human society. To this end, scientists have made significant advances in recent years regarding new materials and devices for improving the energy conversion efficiency for photovoltaics, thermoelectric generation, photoelectrochemical/electrolytic hydrogen generation, and rechargeable metal ion batteries. The aim of this Special Issue is to provide a platform for research scientists and engineers in these areas to demonstrate and exchange their latest research findings. This thematic topic undoubtedly represents an extremely important technological direction, covering materials processing, characterization, simulation, and performance evaluation of thin films used in energy harvesting, conversion, and storage.

photoelectrochemical --- transparent conductive electrode --- lithium ion battery --- heterojunction --- Cu2ZnSn(S --- Ni-rich cathode material --- anode materials --- degradation --- dye-sensitized solar cells --- electron transfer --- water splitting --- energy storage --- bond population --- TiO2 nanotube --- atomic layered deposition --- PbI2 formation --- Ge incorporation --- visible light driven --- nanosheet arrays --- surface --- morphology --- perfect absorption --- organic sensitizers --- energy harvesting --- electronic structures --- water --- Al2O3 oxide --- thin film --- Se)4 --- solar cells --- energy conversion --- solar cell --- polymer --- nickel oxide --- metal-dielectric-metal structure --- color perception --- annealing --- nickel-cobalt-molybdenum metal oxide (NCMO) --- halide perovskite --- LaFeO3 --- few-layer graphene nano-flakes --- photocatalysis --- organic --- synthesis --- perovskite --- nanoparticle deposition system --- Fabry–Perot cavity --- thin films --- semitransparent --- coatings --- density functional theory --- LiNi0.8Co0.1Mn0.1O2 --- mixed metal oxides --- characterization --- density of states --- supercapacitor

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This Special Issue focuses on computational detailed studies (simulation, modeling, and calculations) of the structures, main properties, and peculiarities of the various nanomaterials (nanocrystals, nanoparticles, nanolayers, nanofibers, nanotubes, etc.) based on various elements, including organic and biological components, such as amino acids and peptides. For many practical applications in nanoelectronics., such materials as ferroelectrics and ferromagnetics, having switching parameters (polarization, magnetization), are highly requested, and simulation of dynamics and kinetics of their switching are a very important task. An important task for these studies is computer modeling and computational research of the properties on the various composites of the other nanostructures with polymeric ferroelectrics and with different graphene-like 2-dimensional structures. A wide range of contemporary computational methods and software are used in all these studies.

single nanowires --- silicon --- dual shells --- off-resonance --- absorption --- photocurrent --- magnetism --- transition-metal oxide clusters --- DFT calculations --- structure --- electronic properties --- LGD theory --- polarization --- nanoscale ferroelectrics --- kinetics --- homogeneous switching --- computer simulation --- fitting --- diphenylalanine --- peptide nanotubes --- self-assembly --- water molecules --- DFT --- molecular modelling --- semi-empirical methods --- chirality --- Ir-modified MoS2 --- decomposition components of SF6 --- adsorption and sensing --- atomistic simulation --- core–shell bi-magnetic nanoparticles --- Monte Carlo simulation --- interfacial exchange --- terahertz --- graphene --- plasmons --- Drude absorption --- polarization conversion --- yield surface --- plastic flow --- crystal plasticity --- polycrystalline aluminum --- dipeptides --- helical structures --- molecular modeling --- dipole moments --- tunnel junction --- machine learning --- III-nitride --- hydroxyapatite --- modeling --- density functional theory --- defects --- vacancies --- substitutions --- structural and optical properties --- band gap --- electronic density of states --- nanomaterials --- plasmon-induced transparency --- strontium titanate --- slow light --- iron doping --- hydroxyapatite bioceramics --- hybrid density functional --- X-ray absorption spectroscopy --- phenylalanine --- protein secondary structure --- optoelectronic devices --- nanostructured polymer film --- antireflection coating --- finite-difference time-domain method --- ferroelectrics --- heterostructures --- domains --- negative capacitance

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a