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Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.
ohmic contact --- graphene oxide --- optical gain media --- nano silica sol --- in-situ growth --- silicon quantum dots --- gold nanoparticles --- nanofabrication --- thermal reduction --- long-term mechanical tests --- self-aligned nanowires --- silicon carbide --- micro-mechanism --- telecom wavelengths --- nanoparticles --- single-crystal Si nanomembrane (Si NMs) --- nanowires --- localized surface plasmon resonances --- C/C composites --- thin film transistor --- strain engineering --- nanomembranes --- light emitting devices --- quantum photonics --- ultrathin nanowires --- electroluminescence enhancement --- mechanical properties --- group-IV semiconductors --- self-assembly --- silicon --- SiC nanowires --- fluctuating temperature-humidity conditions --- TiO2 insertion layer
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
ohmic contact --- n/a --- MESFET --- optical band gap --- wide-bandgap semiconductor --- annealing temperature --- junction termination extension (JTE) --- channel length modulation --- silicon carbide (SiC) --- amorphous InGaZnO (a-IGZO) --- light output power --- GaN --- electrochromism --- large signal performance --- passivation layer --- 4H-SiC --- positive gate bias stress (PGBS) --- asymmetric power combining --- ultrahigh upper gate height --- high electron mobility transistors --- space application --- gallium nitride (GaN) --- phase balance --- edge termination --- distributed Bragg reflector --- cathode field plate (CFP) --- ammonothermal GaN --- anode field plate (AFP) --- W band --- GaN high electron mobility transistor (HEMT) --- 1T DRAM --- growth of GaN --- tungsten trioxide film --- thin-film transistor (TFT) --- micron-sized patterned sapphire substrate --- power added efficiency --- T-anode --- analytical model --- AlGaN/GaN --- harsh environment --- high-temperature operation --- amplitude balance --- buffer layer --- characteristic length --- Ku-band --- DIBL effect --- I–V kink effect --- flip-chip light-emitting diodes --- high electron mobility transistors (HEMTs) --- power amplifier --- sidewall GaN --- external quantum efficiency --- breakdown voltage (BV) --- threshold voltage (Vth) stability --- regrown contact --- AlGaN/GaN HEMT --- TCAD --- high electron mobility transistor (HEMT) --- I-V kink effect
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This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.
vertical GaN --- quasi-vertical GaN --- reliability --- trapping --- degradation --- MOS --- trench MOS --- threshold voltage --- nanomanufacturing --- high-throughput method --- material printing --- flexible bioelectronics --- nanomembrane --- hybrid integration --- GaAs --- InGaAs channel --- epitaxial lift-off --- HEMT --- van der Waals --- 3C-SiC --- stacking faults --- doping --- KOH etching --- silicon carbide --- radiation hardness --- proton and electron irradiation --- charge removal rate --- compensation --- irradiation temperature --- heteroepitaxy --- bulk growth --- compliant substrates --- defects --- stress --- cubic silicon carbide --- power electronics --- thin film --- iron-based superconductor --- pulsed laser deposition --- transmission electron microscopy --- diamond --- MPCVD growth --- electron microscopy --- chemical vapour deposition --- 2D materials --- MoS2 --- silica point defects --- optical fibers --- radiation effects --- 4H-SiC --- ohmic contact --- SIMS --- Ti3SiC2 --- simulation --- Schottky barrier --- Schottky diodes --- electrical characterization --- graphene absorption --- Fabry–Perot filter --- radio frequency sputtering --- CVD graphene --- GaN --- thermal management --- GaN-on-diamond --- CVD --- arrhythmia detection --- cardiovascular monitoring --- soft biosensors --- wearable sensors --- flexible electronics --- gate dielectric --- aluminum oxide --- interface --- traps --- instability --- insulators --- binary oxides --- high-κ dielectrics --- wide band gap semiconductors --- energy electronics --- ultra-wide bandgap --- diodes --- transistors --- gallium oxide --- Ga2O3 --- spinel --- ZnGa2O4
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