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Precharge logic is used by a variety of industries in applications where processor speed is the primary goal, such as VLSI (very large systems integration) applications. Also called dynamic logic, this type of design uses a clock to synchronize instructions in circuits. This comprehensive book covers the challenges faced by designers when using this logic style, including logic basics, timing, noise considerations, alternative topologies and more. In addition advanced topics such as skew tolerant design are covered in some detail. Overall this is a comprehensive view of precharge logic, whi
Transistor circuits. --- Logic design. --- Electronic circuit design.
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This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices - the transistors. The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.
Transistors. --- Transistor circuits. --- Electronic circuits --- Transistors --- Electronics --- Semiconductors
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Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them at the forefront of transistor circuit design. Although integrated circuits have widespread application, the role of discrete transistors both as important building blocks which students must understand, and as practical solutions to design problems, remains undiminished.The ninth edition has been thoroughly updated to cover the latest technology and applications, including computer circuit simulation, and many diagrams have been revised to
Transistor circuits. --- Electronic circuits. --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Electronic circuits --- Transistors
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Microwave devices. --- Transistor circuits. --- Parameter estimation. --- Estimation theory --- Stochastic systems --- Electronic circuits --- Transistors --- Electronic apparatus and appliances --- Microwaves
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Organic field-effect transistors. --- Transistor circuits. --- Electronic circuits --- Transistors --- OFETs (Transistors) --- Organic FETs (Transistors) --- Field-effect transistors --- Organic semiconductors --- Thin film transistors
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Electronics --- elektronica --- Circuits transistorises --- Electrotechnique --- Elektrotechniek --- MOSFET transistoren --- Metal oxide semiconductor field-effect transistors --- Transistor circuits --- Transistors MOSFET --- Transistorschakelingen --- Vermogenselektronica --- 621.382 --- #KVIV:BB --- 621.316.52 --- MOS metal oxyde semiconductors --- MOSFET metal oxyde semiconductor field effect transistor --- elektrotechniek --- regeltechniek --- vermogenelektronica --- vermogens Mosfet --- 621.3.049.7 --- 621.3.06 --- 621.38 --- Componenten --- MOSFET's --- Schakelingen --- Electronic devices using solid-state effects. Semiconductor devices --- Transistoren --- Transistoren. --- 621.382 Electronic devices using solid-state effects. Semiconductor devices --- Electrotechniekers
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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Metal oxide semiconductor field-effect transistors. --- Transistor circuits. --- Electronic circuits --- Transistors --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Systems engineering. --- Physics. --- Electronics. --- Engineering. --- Computer engineering. --- Circuits and Systems. --- Physics, general. --- Electronics and Microelectronics, Instrumentation. --- Engineering, general. --- Electrical Engineering. --- Computers --- Construction --- Industrial arts --- Technology --- Electrical engineering --- Physical sciences --- Natural philosophy --- Philosophy, Natural --- Dynamics --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Electronic circuits. --- Microelectronics. --- Electrical engineering. --- Electric engineering --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes
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