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Semiconductor measurement technology : the theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass and resistivity in boron-doped silicon
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Author: Li, Sheng S.
Year: 1979 Publisher: Washington (D.C.): Department of commerce. National bureau of standards
Year: 1979 Publisher: Washington (D.C.): Department of commerce. National bureau of standards
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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
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Authors:
Li, Sheng S.
---
United States.
Year: 1979 Publisher: Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology,
Year: 1979 Publisher: Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology,
Abstract | Keywords | Export | Availability | Bookmark
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Abstract
Book
The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
Loading...
Authors:
Li, Sheng S.
---
United States.
Year: 1979 Publisher: Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology,
Year: 1979 Publisher: Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology,
Abstract | Keywords | Export | Availability | Bookmark
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Export citation
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- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
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