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The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Gallium nitride -- Electric properties. --- Optical materials. --- Optoelectronics. --- Zinc oxide -- Electric properties. --- Gallium nitride --- Zinc oxide --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Gallium nitride. --- Zinc oxide thin films. --- Crystallography. --- Surfaces (Physics). --- Engineering. --- Optical and Electronic Materials. --- Crystallography and Scattering Methods. --- Surfaces and Interfaces, Thin Films. --- Optics, Lasers, Photonics, Optical Devices. --- Nanotechnology and Microengineering. --- Nanoscale Science and Technology. --- Thin films --- Gallium compounds --- Nitrides --- Leptology --- Physical sciences --- Mineralogy --- Construction --- Industrial arts --- Technology --- Physics --- Surface chemistry --- Surfaces (Technology) --- Optics --- Materials --- Electronic materials. --- Materials—Surfaces. --- Thin films. --- Lasers. --- Photonics. --- Nanotechnology. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Molecular technology --- Nanoscale technology --- High technology --- New optics --- Light amplification by stimulated emission of radiation --- Masers, Optical --- Optical masers --- Light amplifiers --- Light sources --- Optoelectronic devices --- Nonlinear optics --- Optical parametric oscillators --- Films, Thin --- Solid film --- Solid state electronics --- Solids --- Coatings --- Thick films --- Electronic materials

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The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

Lasers. --- Semiconductor lasers. --- Semiconductors. --- Engineering & Applied Sciences --- Applied Physics --- Gallium nitride. --- Diodes, Semiconductor. --- Light emitting diodes. --- LEDs (Light emitting diodes) --- Crystal diodes --- Diodes, Crystal --- Semiconductor diodes --- Physics. --- Optics, Lasers, Photonics, Optical Devices. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Materials --- Diodes, Semiconductor --- Electroluminescent devices --- LED lamps --- Light-emitting electrochemical cells --- Semiconductors --- Gallium compounds --- Nitrides --- Lasers --- Photonics. --- New optics --- Optics --- Light amplification by stimulated emission of radiation --- Masers, Optical --- Optical masers --- Light amplifiers --- Light sources --- Optoelectronic devices --- Nonlinear optics --- Optical parametric oscillators