TY - BOOK ID - 138337531 TI - Feature Papers in Electronic Materials Section PY - 2022 PB - Basel MDPI - Multidisciplinary Digital Publishing Institute DB - UniCat KW - vertical GaN KW - quasi-vertical GaN KW - reliability KW - trapping KW - degradation KW - MOS KW - trench MOS KW - threshold voltage KW - nanomanufacturing KW - high-throughput method KW - material printing KW - flexible bioelectronics KW - nanomembrane KW - hybrid integration KW - GaAs KW - InGaAs channel KW - epitaxial lift-off KW - HEMT KW - van der Waals KW - 3C-SiC KW - stacking faults KW - doping KW - KOH etching KW - silicon carbide KW - radiation hardness KW - proton and electron irradiation KW - charge removal rate KW - compensation KW - irradiation temperature KW - heteroepitaxy KW - bulk growth KW - compliant substrates KW - defects KW - stress KW - cubic silicon carbide KW - power electronics KW - thin film KW - iron-based superconductor KW - pulsed laser deposition KW - transmission electron microscopy KW - diamond KW - MPCVD growth KW - electron microscopy KW - chemical vapour deposition KW - 2D materials KW - MoS2 KW - silica point defects KW - optical fibers KW - radiation effects KW - 4H-SiC KW - ohmic contact KW - SIMS KW - Ti3SiC2 KW - simulation KW - Schottky barrier KW - Schottky diodes KW - electrical characterization KW - graphene absorption KW - Fabry–Perot filter KW - radio frequency sputtering KW - CVD graphene KW - GaN KW - thermal management KW - GaN-on-diamond KW - CVD KW - arrhythmia detection KW - cardiovascular monitoring KW - soft biosensors KW - wearable sensors KW - flexible electronics KW - gate dielectric KW - aluminum oxide KW - interface KW - traps KW - instability KW - insulators KW - binary oxides KW - high-κ dielectrics KW - wide band gap semiconductors KW - energy electronics KW - ultra-wide bandgap KW - diodes KW - transistors KW - gallium oxide KW - Ga2O3 KW - spinel KW - ZnGa2O4 UR - https://www.unicat.be/uniCat?func=search&query=sysid:138337531 AB - This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book. ER -