TY - BOOK ID - 4862560 TI - Arbitrary Modeling of TSVs for 3D Integrated Circuits AU - Salah, Khaled. AU - Ismail, Yehea. AU - El-Rouby, Alaa. PY - 2015 SN - 9783319076119 3319076108 9783319076102 1322136785 3319076116 PB - Cham : Springer International Publishing : Imprint: Springer, DB - UniCat KW - Engineering. KW - Circuits and Systems. KW - Electronics and Microelectronics, Instrumentation. KW - Processor Architectures. KW - Computer science. KW - Electronics. KW - Systems engineering. KW - Ingénierie KW - Informatique KW - Electronique KW - Ingénierie des systèmes KW - Embedded computer systems. KW - Integrated circuits -- Design and construction. KW - Three-dimensional integrated circuits. KW - Electrical & Computer Engineering KW - Engineering & Applied Sciences KW - Electrical Engineering KW - Three-dimensional integrated circuits KW - Mathematical models. KW - 3D ICs (Three-dimensional integrated circuits) KW - Microprocessors. KW - Microelectronics. KW - Electronic circuits. KW - Integrated circuits KW - Informatics KW - Science KW - Electrical engineering KW - Physical sciences KW - Engineering systems KW - System engineering KW - Engineering KW - Industrial engineering KW - System analysis KW - Design and construction KW - Minicomputers KW - Microminiature electronic equipment KW - Microminiaturization (Electronics) KW - Electronics KW - Microtechnology KW - Semiconductors KW - Miniature electronic equipment KW - Electron-tube circuits KW - Electric circuits KW - Electron tubes UR - https://www.unicat.be/uniCat?func=search&query=sysid:4862560 AB - This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, and inductive-based communication system, and bandpass filtering. ·Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; ·Enables readers to use a model which is technology dependent and can be used for any TSV configuration; ·Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; ·Equips readers for fast parasitic extraction of TSVs for 3D IC design. ER -