TY - BOOK ID - 134289242 TI - Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II PY - 2022 PB - Basel MDPI - Multidisciplinary Digital Publishing Institute DB - UniCat KW - Technology: general issues KW - History of engineering & technology KW - Energy industries & utilities KW - energy storage system KW - power conditioning system KW - silicon carbide KW - vanadium redox flow batteries KW - AlGaN/GaN KW - SiC KW - high electron mobility transistor KW - Schottky barrier diode KW - breakdown field KW - noise KW - charge traps KW - radio frequency KW - wide-bandgap (WBG) KW - gallium nitride (GaN) KW - silicon carbide (SiC) KW - high electron mobility transistor (HEMT) KW - metal-oxide-semiconductor field effect transistor (MOSFET) KW - driving technology KW - nickel oxide KW - annealing temperature KW - crystallite size KW - optical band gap KW - electrochromic device KW - indium oxide thin film KW - solution method KW - plasma surface treatment KW - bias stability KW - aluminum nitride KW - Schottky barrier diodes KW - radio frequency sputtering KW - X-ray diffraction KW - X-ray photoelectron spectroscopy KW - piezoelectric micromachined ultrasonic transducers KW - ranging KW - time of flight (TOF) KW - time to digital converter circuit (TDC) KW - AlGaN/GaN heterojunction KW - p-GaN gate KW - unidirectional operation KW - rectifying electrode KW - first-principles KW - density functional theory KW - pure β-Ga2O3 KW - Sr-doped β-Ga2O3 KW - p-type doping KW - band structure KW - density of states KW - optical absorption KW - AlN buffer layer KW - NH3 growth interruption KW - strain relaxation KW - GaN-based LED KW - low defect density KW - gate bias modulation KW - palladium catalyst KW - gallium nitride KW - nitrogen dioxide gas sensor KW - laser micromachining KW - sapphire KW - AlGaN/GaN heterostructures KW - high-electron mobility devices KW - p-GaN gate HEMT KW - normally off KW - low-resistance SiC substrate KW - temperature KW - high electron-mobility transistor (HEMT) KW - equivalent-circuit modeling KW - microwave frequency KW - scattering-parameter measurements KW - GaN KW - MIS-HEMTs KW - fabrication KW - threshold voltage stability KW - supercritical technology KW - GaN power HEMTs KW - breakdown voltage KW - current collapse KW - compensation ratio KW - auto-compensation KW - carbon doping KW - HVPE KW - AlN KW - high-temperature KW - buffer layer KW - nitridation KW - high-electron mobility transistor KW - heterogeneous integration KW - SOI KW - QST KW - crystal growth KW - cubic and hexagonal structure KW - blue and yellow luminescence KW - electron lifetime KW - wafer dicing KW - stealth dicing KW - laser thermal separation KW - dry processing KW - laser processing KW - wide bandgap semiconductor KW - photovoltaic module KW - digital signal processor KW - synchronous buck converter KW - polar KW - semi-polar KW - non-polar KW - magnetron sputtering KW - HTA KW - GaN-HEMT mesa structures KW - 2DEG KW - X-ray sensor KW - X-ray imaging KW - n/a UR - https://www.unicat.be/uniCat?func=search&query=sysid:134289242 AB - Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems. ER -