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Radiation hardening

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Operating temperature. --- Radiation hardening. --- Silicon carbides. --- Spacecraft power supplies. --- Heat radiators. --- Radiation effects.

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Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

single event effects --- n/a --- radiation-hardening-by-design (RHBD) --- frequency divider by two --- single event upset --- Image processing --- CMOS analog integrated circuits --- FPGA --- total ionizing dose (TID) --- Impulse Sensitive Function --- soft error --- hardening by design --- radiation hardening by design --- X-rays --- Single-Event Upsets (SEUs) --- line buffer --- heavy ions --- VHDL --- FPGA-based digital controller --- radiation hardening by design (RHBD) --- radiation hardening --- SRAM-based FPGA --- proton irradiation --- ring oscillator --- sensor readout IC --- fault tolerance --- space application --- physical unclonable function --- voltage controlled oscillator (VCO) --- Ring Oscillators --- analog single-event transient (ASET) --- single event opset (SEU) --- SEB --- single event upsets --- bipolar transistor --- total ionizing dose --- protons --- triple modular redundancy (TMR) --- gain degradation --- space electronics --- saturation effect --- configuration memory --- Co-60 gamma radiation --- total ionization dose (TID) --- frequency synthesizers --- CMOS --- PLL --- TDC --- single-event upsets (SEUs) --- bandgap voltage reference (BGR) --- 4MR --- single-shot --- error rates --- Radiation Hardening by Design --- soft errors --- heavy-ions --- single-event effects (SEE) --- single event transient (SET) --- SEE testing --- proton irradiation effects --- RFIC --- single event upset (SEU) --- FMR --- ionization --- radiation tolerant --- triplex–duplex --- neutron irradiation effects --- digital integrated circuits --- single event gate rupture (SEGR) --- power MOSFETs --- ring-oscillator --- selective hardening --- voltage reference --- nuclear fusion --- TMR --- gamma-rays --- gamma ray --- instrumentation amplifier --- radiation effects --- reference circuits --- radiation-hardened --- triplex-duplex