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The rapid increase in new power electronic devices and converters for electric transportation and smart grid technologies requires a deepanalysis of their component performances, considering all of the different environmental scenarios, overload conditions, and high stressoperations. Therefore, evaluation of the reliability and availability of these devices becomes fundamental both from technical and economicalpoints of view. The rapid evolution of technologies and the high reliability level offered by these components have shown that estimating reliability through the traditional approaches is difficult, as historical failure data and/or past observed scenarios demonstrate. With the aim topropose new approaches for the evaluation of reliability, in this book, eleven innovative contributions are collected, all focusedon the reliability assessment of power electronic devices and related components.

Technology: general issues --- Energy industries & utilities --- photovoltaic system --- battery --- DC-coupled configuration --- AC-coupled configuration --- mission profile --- reliability --- LED --- thermal cycling test --- accelerated test --- solder joint --- cracks --- current harmonics --- voltage harmonics --- power electronic converters --- cables --- capacitors --- PPS --- high-power thyristors --- reverse recovery currents --- electromagnetic launching field --- segmented LSTM --- microgrid inverter --- IGBT reliability --- online evaluation --- fusion algorithm --- multi-chip IGBT module --- bond wire --- module transconductance --- temperature calibration --- failure monitoring --- sensor lamp --- low-light mode --- high-light mode --- AC motor drive --- junction temperature --- lifetime prediction --- power MOSFET --- loss modeling --- SiC MOSFET --- AlGaN/GaN HEMT --- cascode structure --- single event effects --- technology computer-aided design simulation --- heavy-ion irradiation experiment --- photovoltaic systems --- DC/AC converter --- maintenance --- power system faults --- availability --- condition monitoring --- power device --- power electronics --- n/a

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The rapid increase in new power electronic devices and converters for electric transportation and smart grid technologies requires a deepanalysis of their component performances, considering all of the different environmental scenarios, overload conditions, and high stressoperations. Therefore, evaluation of the reliability and availability of these devices becomes fundamental both from technical and economicalpoints of view. The rapid evolution of technologies and the high reliability level offered by these components have shown that estimating reliability through the traditional approaches is difficult, as historical failure data and/or past observed scenarios demonstrate. With the aim topropose new approaches for the evaluation of reliability, in this book, eleven innovative contributions are collected, all focusedon the reliability assessment of power electronic devices and related components.

Technology: general issues --- Energy industries & utilities --- photovoltaic system --- battery --- DC-coupled configuration --- AC-coupled configuration --- mission profile --- reliability --- LED --- thermal cycling test --- accelerated test --- solder joint --- cracks --- current harmonics --- voltage harmonics --- power electronic converters --- cables --- capacitors --- PPS --- high-power thyristors --- reverse recovery currents --- electromagnetic launching field --- segmented LSTM --- microgrid inverter --- IGBT reliability --- online evaluation --- fusion algorithm --- multi-chip IGBT module --- bond wire --- module transconductance --- temperature calibration --- failure monitoring --- sensor lamp --- low-light mode --- high-light mode --- AC motor drive --- junction temperature --- lifetime prediction --- power MOSFET --- loss modeling --- SiC MOSFET --- AlGaN/GaN HEMT --- cascode structure --- single event effects --- technology computer-aided design simulation --- heavy-ion irradiation experiment --- photovoltaic systems --- DC/AC converter --- maintenance --- power system faults --- availability --- condition monitoring --- power device --- power electronics --- n/a

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Nowadays, power electronics is an enabling technology in the energy development scenario. Furthermore, power electronics is strictly linked with several fields of technological growth, such as consumer electronics, IT and communications, electrical networks, utilities, industrial drives and robotics, and transportation and automotive sectors. Moreover, the widespread use of power electronics enables cost savings and minimization of losses in several technology applications required for sustainable economic growth. The topologies of DC–DC power converters and switching converters are under continuous development and deserve special attention to highlight the advantages and disadvantages for use increasingly oriented towards green and sustainable development. DC–DC converter topologies are developed in consideration of higher efficiency, reliable control switching strategies, and fault-tolerant configurations. Several types of switching converter topologies are involved in isolated DC–DC converter and nonisolated DC–DC converter solutions operating in hard-switching and soft-switching conditions. Switching converters have applications in a broad range of areas in both low and high power densities. The articles presented in the Special Issue titled "Advanced DC-DC Power Converters and Switching Converters" consolidate the work on the investigation of the switching converter topology considering the technological advances offered by innovative wide-bandgap devices and performance optimization methods in control strategies used.

interleaved operation --- three-winding coupled inductor --- high step-up DC–DC converter --- DC/DC converter --- multi-input-port --- bidirectional --- energy storage --- three-phase bidirectional isolated DC-DC converter --- burst-mode switching --- high-frequency transformer configurations --- phase-shift modulation --- intermittent switching --- three-phase dual-active bridge --- bidirectional converter --- high efficiency --- GaN --- SiC --- buck-boost converter --- high switching frequency --- electric vehicle (EV) --- fast charging --- interleaved dc–dc converter --- SiC devices --- Si devices --- Component Connection Method --- power electronics-based systems --- stability analysis --- state-space methods --- virtual synchronous generators --- DC-DC converters --- photovoltaics --- single-diode model --- state-space --- multi-port dual-active bridge (DAB) converter --- wide-band-gap (WBG) semiconductors --- silicon carbide (SiC) MOSFETs --- power converter --- automotive --- battery charger --- circuit modelling --- power electronics --- SiC MOSFET

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Today, there is a great deal of attention focused on sustainable growth worldwide. The increase in efficiency in the use of energy may even, in this historical moment, bring greater benefit than the use of renewable energies. Electricity appears to be the most sustainable of energies and the most promising hope for a planet capable of growing without compromising its own health and that of its inhabitants. Power electronics and electrical drives are the key technologies that will allow energy savings through the reduction of energy losses in many applications. This Special Issue has collected several scientific contributions related to energy efficiency in electrical equipment. Some articles are dedicated to the use and optimization of permanent magnet motors, which allow obtaining the highest level of efficiency. Most of the contributions describe the energy improvements that can be achieved with power electronics and the use of suitable control techniques. Last but not least, some articles describe interesting solutions for hybrid vehicles, which were created mainly to save energy in the smartest way possible.

History of engineering & technology --- LLC resonant converter --- resonant transformer --- fringing effect --- adjustable magnetizing inductance --- efficiency --- optimal design --- oil pump --- brushless DC --- motor --- robust --- vehicles --- eddy current coupling --- hybrid excited --- magnetic equivalent circuit --- magnetic field analysis --- torque-slip characteristic --- switched inductor capacitor converter --- a power converter --- energy transfer media --- ripple voltage --- conduction loss --- Hybrid Electric Vehicle (HEV) --- series architecture --- supercapacitor --- Energy Management System (EMS) --- storage sizing --- energy efficiency --- backlight --- DC-DC converter --- passive snubber --- voltage stress --- maximum-torque-per-ampere (MTPA) --- torque control --- per unit --- IPMSM --- SiC devices --- Si devices --- three level NPC inverter --- three level T-NPC inverter --- two level SiC MOSFET inverter --- overvoltages --- heat sink volume --- motor emulator --- power loss --- current tracking --- finite set model predictive control --- medium frequency transformer --- power electronic transformer --- Solid State Transformer (SST) --- railway electric traction --- Modular Multilevel Converter (MMC) --- soft-switching --- DC–DC converter --- multi-input converter --- battery --- hybrid electric vehicle (HEV), efficiency --- permanent magnet motor --- synchronous motor --- brushless drive --- industrial application --- turbocompound --- turbocharger --- hybrid electric vehicle (HEV) --- fuel economy

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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

Research & information: general --- Mathematics & science --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism