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Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
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Diodes, Semiconductor --- Reliability. --- Crystal diodes --- Diodes, Crystal --- Semiconductor diodes --- Semiconductors
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This book gives a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. The effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution and intrinsic bistabilities are then described in detail. The applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, are also reviewed. The book closes with a chapter devoted to the more recent field of resonant tunnelling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this stimulating area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
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Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Transistors. --- Diodes.
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