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Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.

ohmic contact --- graphene oxide --- optical gain media --- nano silica sol --- in-situ growth --- silicon quantum dots --- gold nanoparticles --- nanofabrication --- thermal reduction --- long-term mechanical tests --- self-aligned nanowires --- silicon carbide --- micro-mechanism --- telecom wavelengths --- nanoparticles --- single-crystal Si nanomembrane (Si NMs) --- nanowires --- localized surface plasmon resonances --- C/C composites --- thin film transistor --- strain engineering --- nanomembranes --- light emitting devices --- quantum photonics --- ultrathin nanowires --- electroluminescence enhancement --- mechanical properties --- group-IV semiconductors --- self-assembly --- silicon --- SiC nanowires --- fluctuating temperature-humidity conditions --- TiO2 insertion layer

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This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- vertical GaN --- quasi-vertical GaN --- reliability --- trapping --- degradation --- MOS --- trench MOS --- threshold voltage --- nanomanufacturing --- high-throughput method --- material printing --- flexible bioelectronics --- nanomembrane --- hybrid integration --- GaAs --- InGaAs channel --- epitaxial lift-off --- HEMT --- van der Waals --- 3C-SiC --- stacking faults --- doping --- KOH etching --- silicon carbide --- radiation hardness --- proton and electron irradiation --- charge removal rate --- compensation --- irradiation temperature --- heteroepitaxy --- bulk growth --- compliant substrates --- defects --- stress --- cubic silicon carbide --- power electronics --- thin film --- iron-based superconductor --- pulsed laser deposition --- transmission electron microscopy --- diamond --- MPCVD growth --- electron microscopy --- chemical vapour deposition --- 2D materials --- MoS2 --- silica point defects --- optical fibers --- radiation effects --- 4H-SiC --- ohmic contact --- SIMS --- Ti3SiC2 --- simulation --- Schottky barrier --- Schottky diodes --- electrical characterization --- graphene absorption --- Fabry–Perot filter --- radio frequency sputtering --- CVD graphene --- GaN --- thermal management --- GaN-on-diamond --- CVD --- arrhythmia detection --- cardiovascular monitoring --- soft biosensors --- wearable sensors --- flexible electronics --- gate dielectric --- aluminum oxide --- interface --- traps --- instability --- insulators --- binary oxides --- high-κ dielectrics --- wide band gap semiconductors --- energy electronics --- ultra-wide bandgap --- diodes --- transistors --- gallium oxide --- Ga2O3 --- spinel --- ZnGa2O4

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

vertical GaN --- quasi-vertical GaN --- reliability --- trapping --- degradation --- MOS --- trench MOS --- threshold voltage --- nanomanufacturing --- high-throughput method --- material printing --- flexible bioelectronics --- nanomembrane --- hybrid integration --- GaAs --- InGaAs channel --- epitaxial lift-off --- HEMT --- van der Waals --- 3C-SiC --- stacking faults --- doping --- KOH etching --- silicon carbide --- radiation hardness --- proton and electron irradiation --- charge removal rate --- compensation --- irradiation temperature --- heteroepitaxy --- bulk growth --- compliant substrates --- defects --- stress --- cubic silicon carbide --- power electronics --- thin film --- iron-based superconductor --- pulsed laser deposition --- transmission electron microscopy --- diamond --- MPCVD growth --- electron microscopy --- chemical vapour deposition --- 2D materials --- MoS2 --- silica point defects --- optical fibers --- radiation effects --- 4H-SiC --- ohmic contact --- SIMS --- Ti3SiC2 --- simulation --- Schottky barrier --- Schottky diodes --- electrical characterization --- graphene absorption --- Fabry–Perot filter --- radio frequency sputtering --- CVD graphene --- GaN --- thermal management --- GaN-on-diamond --- CVD --- arrhythmia detection --- cardiovascular monitoring --- soft biosensors --- wearable sensors --- flexible electronics --- gate dielectric --- aluminum oxide --- interface --- traps --- instability --- insulators --- binary oxides --- high-κ dielectrics --- wide band gap semiconductors --- energy electronics --- ultra-wide bandgap --- diodes --- transistors --- gallium oxide --- Ga2O3 --- spinel --- ZnGa2O4