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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

Research & information: general --- Mathematics & science --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism