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This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- vertical GaN --- quasi-vertical GaN --- reliability --- trapping --- degradation --- MOS --- trench MOS --- threshold voltage --- nanomanufacturing --- high-throughput method --- material printing --- flexible bioelectronics --- nanomembrane --- hybrid integration --- GaAs --- InGaAs channel --- epitaxial lift-off --- HEMT --- van der Waals --- 3C-SiC --- stacking faults --- doping --- KOH etching --- silicon carbide --- radiation hardness --- proton and electron irradiation --- charge removal rate --- compensation --- irradiation temperature --- heteroepitaxy --- bulk growth --- compliant substrates --- defects --- stress --- cubic silicon carbide --- power electronics --- thin film --- iron-based superconductor --- pulsed laser deposition --- transmission electron microscopy --- diamond --- MPCVD growth --- electron microscopy --- chemical vapour deposition --- 2D materials --- MoS2 --- silica point defects --- optical fibers --- radiation effects --- 4H-SiC --- ohmic contact --- SIMS --- Ti3SiC2 --- simulation --- Schottky barrier --- Schottky diodes --- electrical characterization --- graphene absorption --- Fabry–Perot filter --- radio frequency sputtering --- CVD graphene --- GaN --- thermal management --- GaN-on-diamond --- CVD --- arrhythmia detection --- cardiovascular monitoring --- soft biosensors --- wearable sensors --- flexible electronics --- gate dielectric --- aluminum oxide --- interface --- traps --- instability --- insulators --- binary oxides --- high-κ dielectrics --- wide band gap semiconductors --- energy electronics --- ultra-wide bandgap --- diodes --- transistors --- gallium oxide --- Ga2O3 --- spinel --- ZnGa2O4

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a