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This Special Issue covers solution synthesis, processing, and applications of non-metallic nanomaterials. Zhang et. al. and Jiang et. al. focus on synthesis of kesterite materials, and Wu et. al. and Zhang et. al. focus on synthesis of copper chromium oxide delafossite nanomaterials. Three of these papers discuss solar cell applications using these materials. Yun and Park’s review paper explores the self-assembly of complex nanostructures. Bhalothia et al. show enhanced catalytic activity for NiOx@Pt nanostructures and Wu et. al. report high-sensitivity ammonia sensors made from SnO nanoshells. On flexible electronics, Nakamura et. al. developed Cu nitride ink for rapid photonic processing of conducting lines, Liu et. al. made Au/HfO2/Pt resistive random access memory devices, and Moreira et al. fabricated solution combustion oxide thin film transistors.
Research & information: general --- copper --- copper nitride --- photo sintering --- ink --- paste --- printed electronics --- post-processing --- Cu2ZnSnS4 solar cell --- ball milling --- nano-ink --- annealing --- tin monoxide --- nanoshell --- ammonia sensor --- solution method --- CMZTSSe films --- sol–gel --- electrical properties --- optical properties --- selenization treatment --- solar cells --- oxygen reduction reaction --- nanocatalysts --- carbon nanotube --- wet-chemical reduction method --- Au-clusters --- mass activity --- resistance switching --- high/low resistance --- oxygen defect --- conduction mechanism --- BNSL --- superlattice --- self-assembly --- colloidal nanocrystal --- binary nanocrystal superlattice --- electrospinning --- CuCrO2 --- hollow nanotube --- Al2O3 template --- one-dimensional structures --- IGZO composition --- solution combustion synthesis --- transparent amorphous semiconductor oxides --- low voltage operation --- Mg doped CuCrO2 --- hole transport layer --- organic solar cells --- perovskite solar cells --- n/a --- sol-gel
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This Special Issue covers solution synthesis, processing, and applications of non-metallic nanomaterials. Zhang et. al. and Jiang et. al. focus on synthesis of kesterite materials, and Wu et. al. and Zhang et. al. focus on synthesis of copper chromium oxide delafossite nanomaterials. Three of these papers discuss solar cell applications using these materials. Yun and Park’s review paper explores the self-assembly of complex nanostructures. Bhalothia et al. show enhanced catalytic activity for NiOx@Pt nanostructures and Wu et. al. report high-sensitivity ammonia sensors made from SnO nanoshells. On flexible electronics, Nakamura et. al. developed Cu nitride ink for rapid photonic processing of conducting lines, Liu et. al. made Au/HfO2/Pt resistive random access memory devices, and Moreira et al. fabricated solution combustion oxide thin film transistors.
Research & information: general --- copper --- copper nitride --- photo sintering --- ink --- paste --- printed electronics --- post-processing --- Cu2ZnSnS4 solar cell --- ball milling --- nano-ink --- annealing --- tin monoxide --- nanoshell --- ammonia sensor --- solution method --- CMZTSSe films --- sol–gel --- electrical properties --- optical properties --- selenization treatment --- solar cells --- oxygen reduction reaction --- nanocatalysts --- carbon nanotube --- wet-chemical reduction method --- Au-clusters --- mass activity --- resistance switching --- high/low resistance --- oxygen defect --- conduction mechanism --- BNSL --- superlattice --- self-assembly --- colloidal nanocrystal --- binary nanocrystal superlattice --- electrospinning --- CuCrO2 --- hollow nanotube --- Al2O3 template --- one-dimensional structures --- IGZO composition --- solution combustion synthesis --- transparent amorphous semiconductor oxides --- low voltage operation --- Mg doped CuCrO2 --- hole transport layer --- organic solar cells --- perovskite solar cells --- n/a --- sol-gel
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This Special Issue covers solution synthesis, processing, and applications of non-metallic nanomaterials. Zhang et. al. and Jiang et. al. focus on synthesis of kesterite materials, and Wu et. al. and Zhang et. al. focus on synthesis of copper chromium oxide delafossite nanomaterials. Three of these papers discuss solar cell applications using these materials. Yun and Park’s review paper explores the self-assembly of complex nanostructures. Bhalothia et al. show enhanced catalytic activity for NiOx@Pt nanostructures and Wu et. al. report high-sensitivity ammonia sensors made from SnO nanoshells. On flexible electronics, Nakamura et. al. developed Cu nitride ink for rapid photonic processing of conducting lines, Liu et. al. made Au/HfO2/Pt resistive random access memory devices, and Moreira et al. fabricated solution combustion oxide thin film transistors.
copper --- copper nitride --- photo sintering --- ink --- paste --- printed electronics --- post-processing --- Cu2ZnSnS4 solar cell --- ball milling --- nano-ink --- annealing --- tin monoxide --- nanoshell --- ammonia sensor --- solution method --- CMZTSSe films --- sol–gel --- electrical properties --- optical properties --- selenization treatment --- solar cells --- oxygen reduction reaction --- nanocatalysts --- carbon nanotube --- wet-chemical reduction method --- Au-clusters --- mass activity --- resistance switching --- high/low resistance --- oxygen defect --- conduction mechanism --- BNSL --- superlattice --- self-assembly --- colloidal nanocrystal --- binary nanocrystal superlattice --- electrospinning --- CuCrO2 --- hollow nanotube --- Al2O3 template --- one-dimensional structures --- IGZO composition --- solution combustion synthesis --- transparent amorphous semiconductor oxides --- low voltage operation --- Mg doped CuCrO2 --- hole transport layer --- organic solar cells --- perovskite solar cells --- n/a --- sol-gel
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This book is a printed edition of the Special Issue Crystal Chemistry of Zinc, Cadmium and Mercury that was published in Crystals
hydroxyl group --- bis(1 --- quinaldinic acid --- solidification --- xanthate --- wurtzite --- mechanical --- EBSD --- oxo-centred polyhedra --- coordination polymer --- precipitation --- 5-thiophenedicarboxylic acid --- defects in semiconductors --- zinc(II) complexes --- precursor --- nanometer zinc oxide --- zinc --- thermal analysis --- transmission electron microscopy (TEM) --- crystal chemistry --- pyridine --- dithiocarbamate --- high magnetic field --- index of X-ray powder diffraction data --- 1 --- hydrogen bonding --- 2 --- luminescence --- cadmium --- interface structure --- 3-bis(1 --- mercury --- aqueous solution method --- crystallography --- growth mechanism --- PL spectra --- phonon dispersion --- coordination polymers --- 4-triazol-1-yl)propane --- CdZnTe --- oxochromates(VI) --- Ni3Sn structure type --- structural chemistry --- dithiophosphates --- traveling heater method --- ZnO nanorod arrays --- copper amalgams --- dental amalgams --- unusual coordination modes --- CdS --- zinc-rich crystal --- 4-triazol-1-yl)methane --- elastic --- crystal structure --- phonon --- bitopic ligand --- room-temperature solid state reaction --- zinc complex --- characterization --- crystal engineering --- ZnS --- hydrogen bond
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This book is a printed edition of the Special Issue Crystal Chemistry of Zinc, Cadmium and Mercury that was published in Crystals
hydroxyl group --- bis(1 --- quinaldinic acid --- solidification --- xanthate --- wurtzite --- mechanical --- EBSD --- oxo-centred polyhedra --- coordination polymer --- precipitation --- 5-thiophenedicarboxylic acid --- defects in semiconductors --- zinc(II) complexes --- precursor --- nanometer zinc oxide --- zinc --- thermal analysis --- transmission electron microscopy (TEM) --- crystal chemistry --- pyridine --- dithiocarbamate --- high magnetic field --- index of X-ray powder diffraction data --- 1 --- hydrogen bonding --- 2 --- luminescence --- cadmium --- interface structure --- 3-bis(1 --- mercury --- aqueous solution method --- crystallography --- growth mechanism --- PL spectra --- phonon dispersion --- coordination polymers --- 4-triazol-1-yl)propane --- CdZnTe --- oxochromates(VI) --- Ni3Sn structure type --- structural chemistry --- dithiophosphates --- traveling heater method --- ZnO nanorod arrays --- copper amalgams --- dental amalgams --- unusual coordination modes --- CdS --- zinc-rich crystal --- 4-triazol-1-yl)methane --- elastic --- crystal structure --- phonon --- bitopic ligand --- room-temperature solid state reaction --- zinc complex --- characterization --- crystal engineering --- ZnS --- hydrogen bond
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This book is a printed edition of the Special Issue Crystal Chemistry of Zinc, Cadmium and Mercury that was published in Crystals
hydroxyl group --- bis(1 --- quinaldinic acid --- solidification --- xanthate --- wurtzite --- mechanical --- EBSD --- oxo-centred polyhedra --- coordination polymer --- precipitation --- 5-thiophenedicarboxylic acid --- defects in semiconductors --- zinc(II) complexes --- precursor --- nanometer zinc oxide --- zinc --- thermal analysis --- transmission electron microscopy (TEM) --- crystal chemistry --- pyridine --- dithiocarbamate --- high magnetic field --- index of X-ray powder diffraction data --- 1 --- hydrogen bonding --- 2 --- luminescence --- cadmium --- interface structure --- 3-bis(1 --- mercury --- aqueous solution method --- crystallography --- growth mechanism --- PL spectra --- phonon dispersion --- coordination polymers --- 4-triazol-1-yl)propane --- CdZnTe --- oxochromates(VI) --- Ni3Sn structure type --- structural chemistry --- dithiophosphates --- traveling heater method --- ZnO nanorod arrays --- copper amalgams --- dental amalgams --- unusual coordination modes --- CdS --- zinc-rich crystal --- 4-triazol-1-yl)methane --- elastic --- crystal structure --- phonon --- bitopic ligand --- room-temperature solid state reaction --- zinc complex --- characterization --- crystal engineering --- ZnS --- hydrogen bond
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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a
Choose an application
Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a
Choose an application
Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a
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